smd type ic smd type transistors 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 BCX71G features pnp epitaxial silicon transistor absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo -45 v collector-emitter voltage v ceo -45 v emitter-base voltage v ebo -5 v collector current i c -100 ma collector power dissipation p c 350 mw storage temperature t stg 150 electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector-emitter breakdown voltage b vceo i c =-2ma,i b =0 -45 v emitter-base breakdown voltage b vebo i e =-1a,i c =0 -5 v collector cut-off current i ces v ce =-32v,v be =0 -20 na v ce =-5v,i c = -2ma 120 220 v ce =-1v,i c = -50a 60 i c = -10ma, i b = -0.25ma -0.25 v i c = -50ma, i b = -1.25ma -0.55 v i c = -10ma, i b = -0.25ma -0.6 -0.85 v i c = -50ma, i b = -1.25ma -0.68 -1.05 v base-emitter on voltage v be (on) v ce =-5v,i c = -2ma -0.6 -0.75 v output capactance c ob v cb =-10v,i e =0, f=1mhz pf noise figure n f i c =0.2ma, v ce =5v,f=1khz, rs=2k 6 db turn on time t on i c = -10ma, i b1 = -1ma 150 ns turn off time t off i b2 =-1ma,v bb =3.6v,r l =990 800 ns v be (sat) base-emitter saturation voltage h fe dc current gain collector-emitter saturation voltage v ce (sat) marking marking bg smd type ic smd type smd type ic smd type smd type smd type smd type smd type product specification sales@twtysemi.com 1 of 1 http://www.twtysemi.com 4008-318-123
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